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December2006 / January2007 - Gas & Chemicals Special supplement.
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Features
Editors Comment
By David Ridsdale |
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ALD Precursors:
Some like it hot!
The design and selection of an optimal ALD precursor is driven by many
factors, a critical one being its thermal stability, as it impacts the very
capability of the precursor to do ALD, and to be useable for high volume
manufacturing. Air Liquide’s ALOHA team describes how it should be
characterised. By Jean-Marc Girard, Nicolas Blasco, Christian Dussarrat,
Air Liquide Electronics ALOHA team. |
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Design, Test, and Manufacture for High-Productivity ALD
High-productivity Atomic Layer Deposition (ALD) processes are being
driven by semiconductor applications (e.g., capacitor, gate and
interconnects) requiring ultra-thin films or conformal coatings with
precise thickness control, William Glime, Ph.D., Swagelok Company
and Tom Seidel, Ph.D. Genus, Inc. discuss the challenges in design
and manufacturing in high productivity ALD. |
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Transforming the semiconductor gas supply landscape
In 1895, Carl von Linde began the process that gave birth to the global
industrial gases industry. In September 2006, his name was again associated
with events that would reshape the global landscape of that industry when Linde
AG acquired major global competitor BOC and emerged as The Linde Group.
The result is a new industry leader with a revenue base of almost €12 billion,
with not only the broadest global reach and product range, but also leadership
positions in key regions of Europe and Asia-Pacific. |
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Avago Technologies moves into the SSL LED market
Vast high volume manufacturing experience on compound material wafers is
what has fuled the success of Agilent semiconductors in making LEDs , and thus
the company has come to emerge in a recent reorganisation as Avago
Technologies. David Ridsdale, Editor-in-Chief, EuroAsia semiconductor discusses with Avago the direction it is headed based on the foundations of a
longstanding presence in the industry in a bid to continue illuminating the way. |
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Reducing PFC emissions and gas consumption
C4F8O was studied as an alternative chemistry to C2F6 as a cleaning chamber gas
following deposition of SIO2 film (both Teos based oxyde and Silane based oxyde) in
a NOVELLUS concept one PECVD reactor. Here MHS discusses the results of a
collaboration with 3M where they developed a specific process to reduce emissions. |
For further information please visit www.aloha.airliquide.com or
Email : aloha@airliquide.com
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