STS ASE® Process using high rate Pegasus Source
Surface Technology Systems plc

The Advanced Silicon Etch (ASE®) Process from STS has been the market-leading technology for deep reactive ion etch (DRIE) of silicon, ever since the original "Bosch Process" was patented and licensed to STS in 1994. It is a dry plasma etch process which offers anisotropic, high aspect ratio etching of silicon without the need for cryogenics.

This process works by the use of repeated cycles of passivation and etch. In each passivation step a precursor gas is utilised that when subjected to the plasma results in a polymer layer being deposited on the wafer. In the first part of the following etch step, ions accelerated towards the wafer preferentially remove the polymer from the base of features. In the remainder of the etch step neutral fluorine radicals react with the exposed silicon at the base of the features, isotropically etching the material.

The ASE® Process has been successfully adopted for silicon micromachining for Micro Electro-Mechanical Systems (MEMS), and has also been applied to other applications such as microfluidics, through-wafer via interconnects for wafer-stacking, and a range of nanotechnology areas.

Over the years, continuous research and development activities at STS have resulted in significant improvements in silicon etch rates and other important process characteristics, compared to the original "Bosch" technology. Most recently a new plasma source design, incorporated into STS\' Pegasus system has significantly increased the maximum etch rates (>50µm/min for 1% exposed area) while also improving uniformity and mask selectivity by over 30% compared to existing de-coupled DRIE plasma sources. The increased etch rate and improved uniformity lead to higher throughput and device yield, meaning increased productivity for device manufacturers.

The unique design of Pegasus leads to a more uniform plasma at the wafer surface resulting in improved across-wafer uniformity for both etch rate and critical dimension control. Pegasus also includes a range of software and hardware features that provide further advances in the ASE® process capability, such as reduced feature sidewall roughness and improved profile control while maintaining high etch rates. As standard, Pegasus incorporates STS' patented Parameter Ramping and Silicon on Insulator (SOI) technologies developed for their ASE® process, which allows high aspect ratio micromachining and etching to an insulating layer without notching at the interface.

The Pegasus system has been optimised for reliability and ease of maintenance by adopting a modular design concept that also results in a reduced footprint and improved accessibility. The combination of all of these features ensures a high performing, low cost of ownership solution to meet the highest industry expectation. The system is fully compatible with any of STS' modular platform configurations, from single wafer load-lock to full production cluster systems, enabling a smooth transition from research and development right through to volume production.

The new Pegasus system significantly enhances the process capabilities of the ASE® Process, compared to other DRIE systems currently on the market. This process is a truly enabling technology for device manufacturers, particularly within MEMS and Packaging applications.

STS is committed to continuing to work closely with their customers to further improve the DRIE capabilities of the ASE Process in line with their requirements, and facilitate the continued commercial success of MEMS manufacturing and other areas of the semiconductor industry who can benefit from this technology.

http://www.stsystems.com


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Pall Corporation Microelectronics Group has a PTFE-based filter for high-flow, high-purity, bulk gas delivery systems. The high-flow Emflon filters enable users to shrink the footprint of their filter systems, resulting in lower capital and operational costs.

Pall designed the high-flow Emflon filter for use in the newest generation of display and semiconductor manufacturing facilities, which have a need to filter bulk nitrogen and clean dry air (CDA) at flow rates in excess of 1,700 normal cubic meters per hour (Nm3/h) 1,000 standard cubic feet per minute (SCFM). These high flow rates are required in the manufacture of large-area displays, such as those produced by seventh- and eight-generation display production facilities. The high flow rates also are required in the latest generation of semiconductor production facilities, which use 300mm wafer substrates.

High-flow Emflon filter systems allow manufacturers to use smaller filter housings, saving fab space. A customer will realize an average savings of greater than 20% on system installation and greater than 50% on system maintenance.


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For engineers and scientists working on current and future semiconductor process technologies, the E5270B provides a solution that both meets their needs and lowers their cost of test. The wide variety of available modules and advanced measurement features provide a complete solution for parametric measurement and analysis. Both a VXIplug&play driver and TIS commands are provided as programming aids for customers who choose to use their own software instead of software provided by Agilent Unlike solutions that include both the system controller and measurement resources combined, the E5270B gives you the freedom to manage these resources separately, thereby avoiding the expensive problem of the system controller becoming obsolete years before other elements. The E5270B can be controlled from MS Windows-based, UNIX-based, or even LINUX-based operating system environments. Because you can upgrade your system controller hardware or software without losing the use of your instrument, your investment is protected against unforeseeable technology shifts.

- Ultra low current measurement without cumbersome external preamplifiers.
The E5270B HRSMU supplies 1-femtoamp measurement resolution without the need for cumbersome external preamplifiers, providing an extremely efficient solution for situations not requiring ultra low current measurement. This innate capability enables you to meet the measurement challenges posed by the vast majority of current and future devices. The HRSMU (and redesigned MPSMU) also provides voltage measurement resolution down to 0.5 microvolts. The HRSMU (as well as the redesigned MPSMU) also supports new 0.5 V and 5 V measurement ranges, which improve measurement accuracy for modern lower-voltage transistors. Advanced measurement features include multi-channel sweep mode with parallel test capability, linear/binary search, range management, and force value self-monitoring.

-Flexibility to provide stable 100 attoamp measurements.
The HRSMU accepts an optional atto sense and switch unit (ASU), which increases the low current measurement resolution to 100 attoamps. This is invaluable for certain extreme characterization needs such as memory cell leakage testing. In addition, the ASU allows you to make voltage measurements and force both voltage and current up to the limits of the HRSMU specification.

- Switch between CV and IV measurement without wasting time swapping cables.
The ASU enables switching between 100 attoamp measurement and precise capacitance measurement without changing any cabling. The ASU includes two BNC inputs that are compatible with the outputs of a capacitance meter. Simple software commands enable you to switch between SMU based measurement (IV) and capacitance meter based measurement (CV) without having to change any cabling. You can also use the BNC inputs with other instruments such as a digital voltmeter (DVM) or a pulse generator unit (PGU). No matter what your configuration, the ASU provides better switching measurement performance than an external switching matrix, and offers improved ease of use.

- Cost-effective alternative that takes advantage of your own testing software Agilent provides an industry-standard VXIplug&play driver, a high-level programming interface that saves time by allowing your programmers to avoid having to learn the detailed programming of the instrument. In addition, the TIS -- test instruction set -- interface enables code developed for the lab environment to be used in production. Specifically, TIS allows you to write algorithms for subsequent transfer to the Agilent 4070 production test environment.

No embedded controller in the instrument; Manage your instrument measurement resources separately from your controller and software resources, einsuring that your test investment does not become obsolete too quickly. HRSMU has 1 femtoamp current measurement resolution; Can meet the measurement challenges posed by the vast majority of current and future devices, without the need for external preamplifiers.

HRSMU combines with optional atto sense and switch unit (ASU) to achieve 100 attoamp current measurement resolution; Stable 100 attoamp current resolution via remote sensing meets the most demanding ultra low current measurement requirements.

Switch between CV and IV measurements on positioners via software commands; No need to physically change cabling or move to a different probe station when changing from CV to IV measurement.

MPSMU and HRSMU can measure voltage with 0.5 microvolt resolution. Both SMUs also support new 0.5 V and 5 V measurement ranges. Enables you to perform very demanding component matching and metal line resistance voltage measurements with ease.

Includes industry-standard VXIplug&play driver Ideal when you choose to use your own software, instead of Agilent-provided software. Improves programmer productivity by removing the need to learn detailed programming of the instrument. TIS (Test Instruction Set) commands supported for both BASIC and C Develop algorithms on an instrument that you can then easily transport into your 4070 Series-based production test environment.

http://www.agilent.com


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BedeMetrix™ are non-destructive X-ray metrology tools for high-throughput semiconductor manufacturing processes at 90nm and below.

The tools deliver dramatic yield enhancement through the absolute measurement of material parameters and properties, such as thickness, strain, relaxation, density, porosity, composition, texture, roughness, phase, crystallinity, tilt in SOI. BedeMetrix™ gives process transfer from BedeMetrix™-L to fully automated production line quality control on the BedeMetrix™-F.

Enables semiconductor manufacturers to optimise their processes through better control of their material measurements. BedeMetrix™ measures layer thickness AND other important material properties through multiple layers - essential for ensuring high yields at sub-90nm technology nodes.

BedeMetrix™ combines all X-ray techniques - X-ray reflectivity (XRR), X-ray diffraction (XRD), High Resolution X-ray Diffraction (HRXRD) and X-ray Flourescence (XRF), which are configurable on one tool. This enables fast measurement capability in sub-100 micron test pads and scribe lines on product wafers.

The BedeMetrix™ gives an enhanced small spot, high throughput, non-destructive process.

http://www.bede.com


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Aerotech's ABRS series rotary air-bearing stages provide superior angular positioning, velocity stability, and error motion performance in an exceptionally low-profile package. The ABRS is designed to meet the exacting requirements of wafer inspection, high precision metrology, x-ray diffraction systems, optical inspection and fabrication, and MEMS/nanotechnology device fabrication.

The design of the ABRS series direct-drive rotary stage has been optimized to minimize stage height. The low profile of the stage reduces the effective working height of the system, minimizing "stack-up" related errors. In addition to the low overall height, the ABRS series provides a clear aperture that can be used for product feed-through, laser beam delivery, cable clearance, or application-specific requirements.

The ABRS design features large air-bearing surfaces for high stiffness and load capacity, producing not only excellent axial and radial error motions, but outstanding tilt error motion, as well. The resultant face error motion is significantly better than other rotary air-bearing tables and spindles, greatly benefiting applications requiring exceptional planar performance.

To maximize positioning performance, the ABRS series utilizes Aerotech's S-series slotless, brushless motor. The motor uses an advanced magnetic circuit design to produce high torque output with minimal heat generation. The slotless design is inherently zero cogging and torque-ripple free. This makes the ABRS stages ideal for applications requiring smooth scan velocities at low or high speeds.

An optical encoder is standard with the ABRS. When coupled with Aerotech's feedback multipliers and controls, resolutions of <0.03 arc second are achievable.

Custom versions of the ABRS are available for rate table and inertial guidance test-stand applications.

http://www.aerotech.com


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The WaferMax Z represents a significant breakthrough in vertical alignment of high-precision components in one compact package. Its superior noncontact linear motor drive employs a high-accuracy encoder for direct position feedback. When combined with Aerotech’s MXH multiplier, it offers 0.83 nm resolution in addition to high speed and accuracy.

Bearing elements are cross-roller style for maximum smoothness and reliability. These are mounted on an optimized base and wedge assembly for stiffness and low mass/inertia, enhancing dynamic performance.

All the critical elements of the WaferMax Z were selected to operate in a 24/7 industrial environment and, unlike screw- or piezo-based vertical stages, the WaferMax Z requires no maintenance and will ensure years of trouble-free operation.

To maximize positioning performance, the WaferMax Z utilizes Aerotech’s BLMUC-series brushless, slotless linear motor. This motor has all the advantages of a brushless direct-drive motor — no brushes to wear, no gear trains to maintain, and high acceleration and high speeds. Since it is a slotless, ironless design, there is zero cogging, meaning that there is absolutely no torque ripple. This makes the WaferMax Z ideal for contoured motion, smooth scan velocity, or precise incremental steps.

Performance is assured with a precision linear encoder that results in 0.8 nm resolution. The motor and high-performance linear encoder are directly coupled to increase accuracy.

Aerotech manufactures a wide range of servo amplifiers and advanced controllers to provide a complete, integrated package.

http://www.aerotech.com


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The demand for single-wafer wet-processing technology has expanded beyond the fab floor to a variety of new applications for back-end semiconductor packaging and assembly, where the need for a more flexible, cost-effective and higher-performing wet solution is escalating rapidly.

Semiconductor product wafers are customarily thinned via a substrate-etch process prior to dicing in order to aid the sawing operation, minimize the thickness of the final assembled package, and improve devices’ ability to dissipate heat by lowering the thermal resistance of the die. This is particularly crucial when dealing with advanced packaging technologies—e.g., chip-scale, multi-chip and wafer-level packaging, flip-chip, die/package stacking, and systems-in-package—in which space is at a premium, with die in extremely close proximity.

The primary technologies currently employed for post-grind substrate etching—dry (plasma) and CMP solutions—still induce mechanical damage to the substrate surface, proving destructive to the wafer and the die. Wet processing, however, does not incur such damage, due to the nature of isotropic etching and the different mix of chemistries employed. This leads to less breakage during the sawing operation and increased final packaged device yield. Moreover, SEZ’s wet spin-processing approach delivers a unique advantage for handling thin wafers—its non-contact Bernoulli handling allows safe transfer of even extremely thin wafers, which have a tendency to warp.

There is also an increased need for optimized under-bump metallization (UBM) etch, which, together with wafer bumping, has grown critical to optimizing packaging and assembly techniques such as flip-chip. UBM is the foundation upon which solder bumps are built. Typically, multiple layers of various, compatible metals are deposited and a thick photoresist is applied, followed by electroplating and photoresist stripping. The excess metal is then etched away, before bump reflow and completion. This etching step has moved beyond the scope of batch spray tools' capabilities, especially for 300-mm wafer bumping, while SEZ's single-wafer wet process has proved well suited to meet its increasingly stringent performance requirements.

SEZ’s core Spin Processor technology is suited for other bumping applications as well, including photoresist strip, incoming wafer cleaning, post-plasma chemical vapor deposition (CVD) cleaning, defluxing and bump post-cleans.

Its yield-optimizing capabilities geared toward assembly/packaging include:

• Superior processing quality, throughput and reliability;
• Complete processing flexibility with respect to handling, integration, wafer size, and choice and supply of chemistries; and
• Improved cost of ownership (CoO) through reduced equipment cost and optimized consumption of resources, i.e., chemicals and deionized water.

http://www.sez.com


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EPV100-AW: Absolute Pressure Control — maintains exceptional stability under the toughest fab conditions. Its integrated vacuum generator enables absolute pressure control, eliminating the effects of fluctuating atmospheric pressure. The N2 pilot valve control and patented balancing spool technology deliver a level of response, accuracy, and stability that conventional technology can’t match. The EPV100-AW’s differential pressure monitoring function enables customers to equalize chamber pressure with atmospheric pressure for safe opening of the process chamber.

Specifically designed to control chamber exhaust, the EPV100-AW stabilizes the process environment to enable highly uniform oxide film layers. This elegant, single-package design installs easily, requiring no upstream modifications. Fast response, wide pressure control range, superior reliability, and decreased resource consumption all add up to improved yield and reduced cost of ownership.

Typical Applications
Aera’s EPV100-AW Exhaust Pressure Controller benefits any sensitive, atmospheric pressure manufacturing process, but is especially suited for use with vertical atmospheric thermal oxidization (diffusion) furnaces. This enables diffusion processes to produce the ultra-thin, yet highly uniform oxide film layers that multi-level flash memory products require.

Differentiating Pressure Control Technology
N2 valve control and patented balancing spool technology enable the EPV100-AW to quickly compensate for pressure changes in the chamber and the exhaust duct. An onboard pressure sensor and control circuit form a closed-loop feedback system to control the main valve with outstanding precision. This design enables a wider pressure control range and produces better pressure stability than the conventional motor-drive approach.

Highly Uniform Oxide Layers
As gate oxide thicknesses diminish, stable chamber pressure is increasingly critical. Unstable process exhaust can damage uniformity significantly. AE’s exclusive technology enables a higher level of stability for more precise oxide layer control than conventional approaches.

Better Process Repeatability
EPV100-AW creates a stable process condition that is highly repeatable, chamber-to-chamber and run-to-run. Further, its absolute pressure control approach enables customers to run identical processes at different altitudes and under varying weather conditions.

The EPV100-AW enables diffusion processes to produce the ultra-thin, yet highly uniform oxide film layers that multi-level flash memory products require. AE’s exclusive technology enables a higher level of stability for more precise oxide layer control than conventional approaches.

Aera’s EPV100-AW Exhaust Pressure Controller offers lower operation costs, easier installation, and more precise, rapid exhaust pressure control than any device of its kind on the market today.

http://www.advanced-energy.com


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Silicon Mechanical Resonator
SiTime Corporation

SiTime offers a technology that is more reliable, smaller, and cost effective compared to traditional quartz oscillators. The MEMS First™ process technology will inevitably transform the timing market and free engineers and procurement teams to design and bring both new innovation and current products to market faster because of quick product delivery and availability due to the established silicon processing methods SiTime supports. For over 30 years countless MEMS experts and engineers have tried to integrate resonators and oscillators on silicon, only to fail. The key advantage for impact in society is the advantages of size, price which is 20%-30% lower than existing quartz solutions, and multi functionality (or frequency). What was hindered in electronic advancement in the past due to size can now be enabled due to integration and micro fabrication in areas such as Medicine, Aerospace, Automotive, and Consumer Electronics.

The MEMSFirst™ unique architecture overcomes the contamination issues that usually plague micro-mechanical resonators by fabricating them below the surface of the silicon wafer. This is made possible by its Epi Seal™ process that allows the MEMS structures to be placed in an evacuated, hermetic cavity that’s shielded from the outside environment. The high process temperatures regularly used in standard wafer processes in acts like a self cleaning oven that removes any and all contaminants that have plagued the silicon resonator solution for years past.

The resonator’s hermetic seal also provides enough mechanical protection to let the device be handled just like any other silicon component using conventional high volume packaging technologies. After standard dicing, the IC chips, with oscillators below the surface of the chip, can be packaged in standard plastic injected-molded IC packages. Today, one can locate quartz crystals on a circuit board by their visual appearance. SiTime resonators and oscillators look (and cost) just like any other silicon component.

In April of 2006, SiTime delivered the first samples of its SiRes ™ oscillator products which includes the SiT8002 and SiT1xxx oscillator families, to a handful of carefully-selected alpha customers for evaluation. SiTime is entering the market at an exciting time and is at the forefront in providing cost effective, reliable, and dependable Silicon MEMS First™ solutions to key players in the quartz and timing industry, which is continually expanding due to innovation, minituration, and integration. SiTime technology complements these driving factors by and as a result become the first MEMS fabless IC Company to give the age old quartz industry a run for their money.

While the company is only 18 months old, it is already being courted by multi-billion companies with large interests in quartz. SiTime is confident that it can have a major impact on, and significantly disrupt, the electronic timing industry, which consists of $3.1B+ in quartz crystals and $2B+ in IC timing chips associated with the quartz elements. In addition, the extreme miniaturization and cost improvements made possible by MEMS First™ will hugely impact industries such as wireless and microcontrollers.

The first quartz crystals were used in the 20’s and by the mid 40’s hundreds of quartz companies were formed to meet the rising demand for quartz based oscillator products. The Silicon MEMS oscillator solution has been in development for over 30 years. These industry changing technologies simmer for a long time in development, then when ready they rip through markets are tremendous speeds. SiTime will impact and reorganize the corporate landscape of a multi-billion dollar industry. SiTime has accomplished what researchers, like Kurt Petersen have devoted their lives to; the commercialization of MEMS oscillators. And, as they say -- It’s About Time.

http://www.sitime.com


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The SpectraFx 200 is designed to achieve cost-effective production control over advanced film processes at the 65nm node and below. Based on its spectroscopic ellipsometry (SE) technology, SpectraFx 200 leverages a new 150 SE option to enable qualification and monitoring of such advanced films as ultra-thin ONO layers, nitrided films, high-k and low-k dielectronics, amongst others.

At the 65-nm node, process tolerances are so small that within-die variation and airborne molecular contamination (AMC) can have a major impact on device performance. New types of materials are also being added that require new measurements parameters, such as composition and film stress. Traditional proxy measurements, which utilize blank pad structures, cannot detect these process variations at the die level, and are thus no longer enough to meet the requirements for production films control. SpectraFx 200 provides robust, non-destructive measurements that more accurately reflect process conditions at the die level, enabling chipmakers to achieve cost effective production films control for the 65nm node and beyond.

With KLA-Tenor’s DPM capability, SpectrFx 200 measures test structures composed of alternating metal dielectric arrays, which significantly improve correlation to within-die variations. These patterned structures generate complex diffraction spectra, which are then turned into accurate measurements using powerful onboard algrorithms. With its new 150 SE option, SpectaFx 200 enables measurement in the “vacuum UV” (150-nm wavelength) accurately monitor film thickness and composition variations on new materials such as high-k films. On nitrided films and hafnium silicate gates a two-fold improvement in repeatability and matching compared to 190-nm wavelength scatterometry-based systems is being claimed. The systems AccuFilm capability eliminates the effects of AMC. SpectraFx 200 also provides enhanced 2-D and 3-D product wafer stress metrology-allowing users to obtain wafer stress measurements that correlate to die-level stress more accurately than traditional 1-D monitor wafer measurements, thereby improving root cause analysis.

Advanced films such as ultra-thin ONO layers, nitrided films, high-k and low-k dielectrics, 193-nm anti-reflective coating (ARC) layers, and engineered substrates, including silicon-on-insulator (SOI), strained silicon, and silicon geranium (SiGe)

All major optical components on the SpectraFx 200 have been redesigned to lower spectral distortion. A faster computer and a cleaner, faster front-end wafer-handler, combined with remote diagnostics and iSupport for 300-mm automated fabs.


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